Metal coated nanocrystalline silicon as an active surface...

Optics: measuring and testing – Sample – specimen – or standard holder or support

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C356S301000

Reexamination Certificate

active

11264433

ABSTRACT:
The disclosed methods and apparatus concern Raman spectroscopy using metal coated nanocrystalline porous silicon substrates. Porous silicon substrates may be formed by anodic etching in dilute hydrofluoric acid. A thin coating of a Raman active metal, such as gold or silver, may be coated onto the porous silicon by cathodic electromigration or any known technique. In certain alternatives, the metal coated porous silicon substrate comprises a plasma-oxidized, dip and decomposed porous silicon substrate. The metal-coated substrate provides an extensive, metal rich environment for SERS, SERRS, hyper-Raman and/or CARS Raman spectroscopy. In certain alternatives, metal nanoparticles may be added to the metal-coated substrate to further enhance the Raman signals. Raman spectroscopy may be used to detect, identify and/or quantify a wide variety of analytes, using the disclosed methods and apparatus. In some disclosed methods, Raman spectroscopy may be used to detect nucleotides, purines or pyrimidines at the single molecule level.

REFERENCES:
patent: 5255067 (1993-10-01), Carrabba et al.
patent: 5561304 (1996-10-01), Canham et al.
patent: 5567628 (1996-10-01), Tarcha et al.
patent: 6399177 (2002-06-01), Fonash et al.
patent: 6504292 (2003-01-01), Choi et al.
patent: 6623977 (2003-09-01), Farquharson et al.
patent: 6972173 (2005-12-01), Su et al.
patent: 6989897 (2006-01-01), Chan et al.
patent: 7192703 (2007-03-01), Sun et al.
patent: 7238477 (2007-07-01), Su et al.
patent: 7267948 (2007-09-01), Vo-Dinh
patent: 2002/0020053 (2002-02-01), Fonash et al.
patent: 2002/0142480 (2002-10-01), Natan
patent: 0984269 (2000-03-01), None
patent: 590479 (1947-07-01), None
patent: 2 373 367 (2002-09-01), None
patent: WO 00/08445 (2000-02-01), None
patent: WO-00/08445 (2000-02-01), None
patent: 03/106943 (2003-12-01), None
Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57:1046, 1990.
Collins et al., Physics Today 50:24-31, 1997.
Cullis et al., J. Appl. Phys. 82:909-965, 1997.
Edelberg, et al., “Visible luminescence from nanocrystalline silicono films produced by plasma enhanced chemical vapor deposition,” Appl. Phys. Lett., 68:1415-1417, 1996.
Feldheim, “Assembly of metal nanoparticle arrays using molecular bridges,” The Electrochemical Society Interface, Fall, 2001, pp. 22-25.
Gole et al., “Patterned metallization of porous silicon from electroless solution for direct electriceal contact,” J. Electrochem. Soc. 147:3758, 2000.
Henneke, “Porous Silicon: theories behind light emission,” 1996, 1-4. Retrieved from the Internet URL: <http:/
eon.utexas.edu/academic/courses/Fall1997/CH380L/student.papers/dh.html>.
Jin et al., “Photoinduced conversion of silver nanospheres to nanoprisms,”Science294:1901, 2001.
Lopez and Fauchet, “Erbium emission form porous silicon one-dimensional photonic band gap structures,” Appl. Phys. Lett. 77:3704-6, 2000.
Lutzen et al., Structural characteristics of ultrathin nanocrystalline silicon films formed by annealing amorphous silicon, J. Vac. Sci. Technology B 16:2802-05, 1998.
Petrova-Koch et al., “Rapid-thermal-oxidized porous silicon—the superior photoluminescent Si,” Appl. Phys. Lett. 61:943, 1992.
Gole, J.L. et al., “Patterned Metallization of Porous Silicon from Electroless Solution for Direct Electrical Contact”,Journ. Of The Electrochemical Society, 147 (10) 3785-3789 (2000).
Parbokov et al., “The production of a novel stain-etched porous silicon, metallization of the porous surface and application in hydrocarbon sensors”,Materials Science and Engineering, C15:121-123 (2001).
Vo-Dinh, T., “Surface-enhanced Raman Spectroscopy using metallic nanostructures”,Trends in Analytical Chemistry, vol. 17, Nos. 8-9, (1998).
Unal, B. et al., “Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices”,Optical Materials,17;79-82 (2001).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Metal coated nanocrystalline silicon as an active surface... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal coated nanocrystalline silicon as an active surface..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal coated nanocrystalline silicon as an active surface... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3940422

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.