Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1988-12-19

1990-12-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, 372 96, H01S 319

Patent

active

049775685

ABSTRACT:
There is disclosed a semiconductor laser device with a strip-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation. This semiconductor laser device comprises an optical waveguide that a semiconductor laser device with a stripe-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer just above the striped channel of the substrate based on a decrease in the effective refractive index due to the striped channel, the outside of which absorbs a laser beam produced in the active layer; a striped mesa that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a plurality of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer.

REFERENCES:
patent: 4868838 (1989-09-01), Yamamoto
Patent Abstracts of Japan (Oct. 22, 1987), vol. 11, No. 325, E-551, 2772.
Patent Abstracts of Japan, (Jul. 4, 1985), vol. 9, No. 159, E-326, 1882.
Patent Abstracts of Japan (Feb. 20, 1987), vol. 11, No. 55, E-481 2502.
Patent Abstracts of Japan, (Aug. 6, 1985), vol. 9, No. 189, E-333, 1912.
Yamamoto et al., (1982), Appl. Phys. Lett. 40(5):372-374.
Yamamoto et al., (1987), J. Appl. Phys. 61(8):3108-3110.
Patent Abstracts of Japan (Aug. 22, 1986), vol. 10, No. 244, E-430, 2300.

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