Semiconductor laser arrangement for high output powers in the la

Details Semiconductor laser arrangement for high output powers in the la Semiconductor laser arrangement for high output powers in the la

1989-10-11

1990-12-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 50, 372 92, 372 96, H01S 319

Patent

active

049775677

ABSTRACT:
A semiconductor laser arrangement for high output power in the lateral fundamental mode. A semiconductor laser region is provided in which a waveguide is provided for wave guidance, this waveguide being dimensioned such that the laser emission oscillates in the fundamental mode perpendicularly to its propagation direction. The arrangement has a coupling region, and an intensification region in which the lateral wave guidance is cancelled and is provided with a contact for current injection.

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"GaAs-AlxGal-xAs Injection Lasers with Distributed Bragg Reflectors", by F. K. Reinhart et al., Applied Physics Letters, vol. 27, No. 1, Jul. 1975, pp. 45-48.
"Injection Heterolaser with Radiation Extracted Through a Diffraction Grating ", by M. N. Mizerow et al., Sov. Phys. Semicond., vol. 8, No. 10, Apr. 1975, pp. 1321-1322.

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