Growing lower defect semiconductor crystals on highly...

Details Growing lower defect semiconductor crystals on highly... Growing lower defect semiconductor crystals on highly...

2008-04-22

2008-04-22

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S046000, C977S932000

Reexamination Certificate

active

11391528

ABSTRACT:
A heterosystem of two different materials, mismatched in terms of lattice constant or symmetry, may be formed with reduced defects by using a two step approach proposed in this invention. Nanowires are first grown on a semiconductor substrate, and then a thin film of the disparate crystallographically inconsistent material is grown from the nanowires through a two dimensional growth mode. The nanowire material may better match crystallographically to both the substrate and the grown film, or is simply the same as the grown film.

REFERENCES:
patent: 6831017 (2004-12-01), Li et al.
patent: 2006/0091408 (2006-05-01), Kim et al.
Sakai et al. “A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE,” Journal of Crystal Growth 2000.
Kuykendall et al., “Crystallographic Alignment of High-Density Gallium Nitride Nanowire Arrays”, Advanced Online Publication, 2004.

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