Planar avalanche photodiode

Details Planar avalanche photodiode Planar avalanche photodiode

2008-03-25

2008-03-25

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S186000, C257S191000, C257S438000, C257SE31063

Reexamination Certificate

active

10502110

ABSTRACT:
The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer, and a p-type contact layer. Further embodiments include a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer and a p-type semiconductor layer electrically coupled to a p-type contact layer.

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