Semiconductor device

Details Semiconductor device Semiconductor device

2008-01-29

2008-01-29

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S014000, C257S015000, C438S312000

Reexamination Certificate

active

10962492

ABSTRACT:
The present invention relates to a semiconductor device having a multi-layered structure comprising an emitter layer, a base layer, and a collector layer, each composed of a group III-V n-type compound semiconductor in this order; a quantum dot barrier layer disposed between the emitter layer and the base layer; a collector electrode, a base electrode and the emitter layer all connected to an emitter electrode; the quantum dot barrier layer having a plurality of quantum dots being sandwiched between first and second barrier layers from the emitter layer side and the base layer side, respectively and each having a portion that is convex to the base layer; a base layer side interface in the second barrier layer, and collector layer side and emitter layer side interfaces in the base layer having curvatures that are convex to the collector layer corresponding to the convex portions of the quantum dots.

REFERENCES:
patent: 5844253 (1998-12-01), Kim et al.
patent: 6011271 (2000-01-01), Sakuma et al.
patent: 2002/0075924 (2002-06-01), Mukai
patent: 9-82900 (1997-03-01), None
patent: 9-116169 (1997-05-01), None
patent: 9-326506 (1997-12-01), None
patent: 10-308526 (1998-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3939243