SOI wafer with cooling channels and a method of manufacture...

Details SOI wafer with cooling channels and a method of manufacture... SOI wafer with cooling channels and a method of manufacture...

2008-03-18

2008-03-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257SE21563, C257SE21562

Reexamination Certificate

active

11038872

ABSTRACT:
A method (100) of forming a silicon-on-insulator (SOI) wafer includes forming one or more channels in a top surface of a first wafer (104), and forming an insulator layer on a second wafer (106). The second wafer is treated (108) to generate a structural weakness therein, and the first and second wafers together (110) are then bonded together so that the channels face the insulator layer. A portion of the second wafer is then removed (112) from the bonded first and second wafers at a location corresponding to the structure weakness.

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