Method for forming a storage cell capacitor compatible with...

Details Method for forming a storage cell capacitor compatible with... Method for forming a storage cell capacitor compatible with...

Filed on

2008-07-15

Date issued

2008-07-15

Examiner

Nguyen, Donghai D. (Department: 3729)

Patent Class

Metal working

SubClass

Method of mechanical manufacture

SubSubClass

Electrical device making

Other Related Categories

C029S025420, C257S310000, C438S396000

Type

Reexamination Certificate

Status

active

Patent number

11458072

Description

ABSTRACT:
An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an oxidation resistant layer. An insulative layer protects sidewalls of the barrier layer during deposition and anneal of a dielectric layer. The method includes forming the conductive plug recessed in an insulative layer. The barrier layer is formed in the recess and the top layer. An oxidation resistant conductive layer and a further oxide layer are formed in the recess. The conductive layer is planarized to expose the oxide or oxide
itride layer. The oxide layers are then etched to expose the top surface and vertical portions of the conductive layer. A dielectric layer is formed to overlie the storage node electrode. A cell plate electrode is fabricated to overlie the dielectric layer.

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