Static information storage and retrieval – Floating gate
Reexamination Certificate
2008-07-29
2008-07-29
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
C365S185030, C365S185180
Reexamination Certificate
active
11470932
ABSTRACT:
A non-volatile memory device has a channel region between source/drain regions, a floating gate, a control gate, a first dielectric region between the channel region and the floating gate, and a second dielectric region between the floating gate and the control gate. The first dielectric region includes a high-K material. The non-volatile memory device is programmed and/or erased by transferring charge between the floating gate and the control gate via the second dielectric region.
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Lutze Jeffrey W.
Mokhlesi Nima
Hoang Huan
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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