Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

2008-04-15

2008-04-15

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S238000, C257SE21019, C257SE27048

Reexamination Certificate

active

11209082

ABSTRACT:
A carbon containing masking layer is patterned to include a plurality of container openings therein having minimum feature dimensions of less than or equal to 0.20 micron. The container openings respectively have at least three peripheral corner areas which are each rounded. The container forming layer is plasma etched through the masking layer openings. In one implementation, such plasma etching uses conditions effective to both a) etch the masking layer to modify shape of the masking layer openings by at least reducing degree of roundness of the at least three corners in the masking layer, and b) form container openings in the container forming layer of the modified shapes. Capacitors comprising container shapes are formed using the container openings in the container forming layer. Other implementations and aspects are disclosed.

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