Photomask correcting method and manufacturing method of...

Details Photomask correcting method and manufacturing method of... Photomask correcting method and manufacturing method of...

2008-07-15

2008-07-15

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S394000

Reexamination Certificate

active

10860138

ABSTRACT:
A writing pattern data generating method for, in order to form a first photomask for use in a manufacturing method of a semiconductor device which including forming a first resist pattern on a mask film formed on a first film using the first photomask, forming a first mask pattern by etching the mask film, removing the first resist pattern, forming a second resist film on the mask film, forming a second resist pattern on the mask film, forming a second mask pattern by etching the mask film, removing the second resist pattern, and forming a first film pattern by etching the first film, the generating method comprising correcting a first pattern data in accordance with a difference between the first film pattern and the second mask pattern and a difference between the first resist pattern and the first mask pattern.

REFERENCES:
patent: 6787459 (2004-09-01), Moniwa et al.
patent: 6821683 (2004-11-01), Toyama et al.
patent: 11-102062 (1999-04-01), None
patent: 11-174658 (1999-07-01), None
patent: 2002-311563 (2002-10-01), None
patent: 2002-359352 (2002-12-01), None
patent: 2003-015272 (2003-01-01), None
Notification of Reasons for Rejection from Japanese Patent Office mailed Feb. 27, 2007 in Japanese Patent Application No. 2003-161038, and English translation thereof.

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