Magnetoresistive effect having multiple base layers between...

Details Magnetoresistive effect having multiple base layers between... Magnetoresistive effect having multiple base layers between...

2008-03-11

2008-03-11

Heinz, A. J. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324200

Reexamination Certificate

active

11072164

ABSTRACT:
The magnetoresistive effect element comprises an electrode layer12of a crystalline material; a base layer14of a conductive amorphous material formed over the electrode layer12, an antiferromagnetic layer18of a crystalline material formed over the base layer14, a ferromagnetic layer20formed over the antiferromagnetic layer18and having the magnetization direction defined by the antiferromagnetic layer18, a nonmagnetic intermediate layer22formed over the ferromagnetic layer20, a ferromagnetic layer24formed over the nonmagnetic intermediate layer22and having the magnetization direction changed by an external magnetic field, and an electrode layer28formed over the ferromagnetic layer24.

REFERENCES:
patent: 6317299 (2001-11-01), Pinarbasi
patent: 6735058 (2004-05-01), Lin et al.
patent: 2005/0073778 (2005-04-01), Hasegawa et al.
patent: 7-287819 (1995-10-01), None
patent: 2000-216020 (2000-08-01), None
patent: 2001-325704 (2001-11-01), None
patent: 2003-317213 (2003-11-01), None
Tanaka et al.; “Spin-Valve Heads in the current-Perpendicular-to-Plane Mode for Ultrahigh-Density Recording”; IEEE Trans. on Mag. Vo. 38, No. 1; pp. 84-88; Jan. 2002.

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