Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-07-15
2008-07-15
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE23004, C257SE23063, C257SE23101, C257SE23178, C257SE23069, C257SE25012, C257SE25031, C257S701000, C257S758000, C257S778000, C257S737000, C257S738000, C257S698000, C257S703000, C257S704000, C257S532000, C257S528000, C257S710000, C257S712000, C257S717000, C257S720000
Reexamination Certificate
active
11023044
ABSTRACT:
A semiconductor device includes a support body, a first substrate provided on a surface at one side of the support body, a second substrate provided on a surface at the other side of the support body, and a semiconductor chip provided on the first substrate exposed to an opening part piercing the support body and the second substrate. The first substrate includes a first dielectric layer and a wiring layer, a plurality of first electrodes connected to the semiconductor chip which first electrodes are provided on a first surface of the first substrate exposed to an inside of the opening part, and the second substrate includes a second dielectric layer made of a material substantially the same as the first dielectric layer.
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S. Towle, et al.; “Bumpless Build-Up Layer Packaging;” ASME International Mechanical Engineering Congress and Exposition (IMECE); Nov. 11, 2001; (19 Sheets.)/Discussed in the specification.
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Abe Tomoyuki
Tani Motoaki
Fujitsu Limited
Kratz, Quintos & Hanson, LLP.
Williams Alexander Oscar
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