Schottky barrier diode and integrated circuit using the same

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier

Reexamination Certificate

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C257S472000, C257SE29338

Reexamination Certificate

active

11271833

ABSTRACT:
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.

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patent: 2003-229566 (2003-08-01), None
patent: 2003-282863 (2003-10-01), None
patent: 2004-031896 (2004-01-01), None

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