Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1996-07-22

1998-08-11

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

257738, 257 48, 257734, 438613, 438 17, 324754, 324758, H01L 2348, H01L 2352, H01L 2940

Patent

active

057931178

ABSTRACT:
The invention provides a semiconductor device including a semiconductor substrate formed thereon with at least one recessed portion, an electrically conductive layer covering at least a surface of the recessed portion therewith, and a ball-bump formed on the electrically conductive layer within the recessed portion. The semiconductor device can act as a probe card by additionally having a tester device formed in the semiconductor substrate and provided with a function of testing electrical performances of a semiconductor device. Since the recessed portion can be formed by lithography technique, it is possible to arrange the greater number of pins in a smaller pitch, and in addition, it is also possible to locate ball-bumps in place with higher accuracy than a conventional semiconductor device.

REFERENCES:
patent: 3882532 (1975-05-01), Quinn
patent: 5081421 (1992-01-01), Miller et al.
patent: 5232962 (1993-08-01), Dershem et al.
patent: 5289038 (1994-02-01), Amano
patent: 5291064 (1994-03-01), Kurokawa
patent: 5337397 (1994-08-01), Lebby et al.
patent: 5348835 (1994-09-01), Oba et al.
patent: 5363038 (1994-11-01), Love
patent: 5506423 (1996-04-01), Saeki
patent: 5523586 (1996-06-01), Sakurai
patent: 5532610 (1996-07-01), Tsujide et al.

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