Semiconductor laser

Details Semiconductor laser Semiconductor laser

2008-07-08

2008-07-08

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

11530968

ABSTRACT:
A semiconductor laser according to the present invention comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and the n-cladding layer or the p-cladding layer and including a phase shift structure in a part of the diffraction grating layer in an optical waveguide direction. The width of the p-cladding layer is increased in a portion corresponding to the phase shift structure of the diffraction grating layer.

REFERENCES:
patent: 4896331 (1990-01-01), Hirata
patent: 2002/0141467 (2002-10-01), Iwai et al.
patent: 11-220220 (1999-08-01), None
patent: 2000-357842 (2000-12-01), None
patent: 2002-299759 (2002-10-01), None
patent: 2005-302843 (2005-10-01), None

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