Semiconductor device

Details Semiconductor device Semiconductor device

2008-01-15

2008-01-15

Thai, Luan (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

C257S579000, C257S502000, C257S503000, C257SE23079

Reexamination Certificate

active

11276668

ABSTRACT:
A semiconductor device has a structure capable of connecting a lead terminal directly to an electrode on a front surface thereof. The semiconductor device includes a first main electrode provided on the front surface, a second main electrode provided on a back surface, and a metal film provided so as to cover at least a portion of a surface of the first main electrode and for soldering the lead terminal thereto. Here, the metal film includes a plurality of opening portions through which the surface of the first main electrode is exposed.

REFERENCES:
patent: 5843798 (1998-12-01), Matsuda
patent: 6294837 (2001-09-01), Akram et al.
patent: 6514845 (2003-02-01), Eng et al.
patent: 6522017 (2003-02-01), Horiuchi et al.
patent: 7037819 (2006-05-01), Gosselin et al.
patent: 7060526 (2006-06-01), Farnworth et al.
patent: 2005/0161803 (2005-07-01), Mihara
patent: 2005/0194692 (2005-09-01), Windlass et al.
patent: 2005/0224982 (2005-10-01), Kemerling et al.
patent: 2003-218155 (2003-07-01), None

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