Means to establish orientation of ion beam to wafer and...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C250S39600R, C250S397000, C250S492200, C250S398000, C250S492300

Reexamination Certificate

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11290344

ABSTRACT:
One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the ion beam to be accurately determined by moving the measurement component relative to the ion beam. The measurement component is oriented at a known relationship relative to the workpiece so that a relative orientation between the workpiece and beam can be established. Knowing the relative orientation between the ion beam and workpiece allows the workpiece to be oriented to a specific angle relative to the measured beam angle for more accurate and precise doping of the workpiece, which enhances semiconductor fabrication.

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patent: 6690022 (2004-02-01), Larsen et al.
patent: 6828527 (2004-12-01), Simic-Glavaski et al.
patent: 6852984 (2005-02-01), Krueger
patent: 2003/0094583 (2003-05-01), Jang et al.
patent: 2003/0197132 (2003-10-01), Keum et al.
patent: 0 975 004 (2000-01-01), None
patent: 2 355 337 (2001-04-01), None
patent: WO 02/058103 (2002-07-01), None
International Search Report, Int'l Application No. PCT/US2006/044891, Int'l Filing Data Nov. 17, 2006, 3 pgs.

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