Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-04-01
2008-04-01
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S053000, C257S056000, C257SE31034, C257SE31061, C257SE31094, C136S249000, C136S258000, C136S261000
Reexamination Certificate
active
10542147
ABSTRACT:
A solar battery10comprises a metal electrode layer12, a pin junction100, and a transparent electrode layer16which are successively laminated on a substrate11such as a silicon substrate. The pin junction100comprises an n-layer13, an i-layer14, and a p-layer15which are laminated in succession. The i-layer14is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer14exhibits a characteristic as an intrinsic semiconductor layer.
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Patent Assignment Abstract of Title for the instant application.
Tsuyoshi Yoshitake et al.; “Hydrogenation of semiconducting amorphous FeSi2”;Japan Atomic Energy Research Institute, JAERI-Conf. 2002-014; Jan. 2003; pp. 12-13 (w/ translation).
Morooka Hisao
Nishi Kazuo
Yamada Hiroshi
Liu Benjamin Tzu-Hung
Semiconductor Energy Laboratory Co,. Ltd.
TDK Corporation
Tran Minhloan
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