Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-04-29
2008-04-29
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S057000, C438S083000, C257SE31003
Reexamination Certificate
active
10555072
ABSTRACT:
This invention relates to a process for making a semiconductor device comprising the following steps:a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made,a first metallisation area is deposited on the doped region,a dielectric layer is deposited on at least the window and the first metallisation area,at least a first opening is etched in the dielectric layer at the window to accommodate a doped region with a second type of conductivity while arranging an undoped portion of the semiconductor substrate laterally between the doped regions,the substrate is doped to create the doped region with the second type of conductivity,a second metallisation area is deposited.Application particularly for solar cells in thin layer.
REFERENCES:
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patent: 6396046 (2002-05-01), Possin et al.
patent: 6423568 (2002-07-01), Verlinden et al.
Swanson et al., “Point-Contact Silicon Solar Cells”, Transactions on Electron Devices, vol. ED-31, No. 5, May 1984, 1984, pp. 661-664.
C. L. Tilford et al., “Development of a 10 kw Reflective Dish PV System”, IEEE, 1993, pp. 1222-1227.
P. Verlinden et al., “Multilevel Metallization for Large Area Point-Contact Solar Cells”, Proceedings of the International Photovoltaic Energy Conference, May 9-13, 1988, pp. 1466-1471.
French Preliminary Search Report for Application No. 0350136000, dated Jan. 26, 2004.
Pirot Marc
Ribeyron Pierre-Jean
Commissariat a l''Energie Atomique
Patel Reema
Thelen Reid Brown Raysman & Steiner LLP
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