Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-05-20
2008-05-20
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S253000, C438S396000, C438S398000
Reexamination Certificate
active
11227084
ABSTRACT:
The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage failure due to a weak state capacitor, by connecting a plurality of capacitors in parallel in a ferroelectric capacitor unit for storing data, instead of using a single capacitor, thereby improving storage reliability and stability. In addition, the ferroelectric register obtains a data sensing margin by pumping a cell plate signal into not a power voltage level but a pumping voltage level.
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Kebede Brook
Lee Jae
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