HGCDTE S-I-S two color infrared detector

Details HGCDTE S-I-S two color infrared detector HGCDTE S-I-S two color infrared detector

1994-09-20

1997-06-03

Thomas, Tom

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

H01L 2714

Patent

active

056354070

ABSTRACT:
A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.

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Goodwin et al, "Metal-insulator semiconductor properties of molecular-beam epitaxy graph HGCDTE heterostructures".

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