Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-07-08
2008-07-08
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23011, C257SE23020, C257SE23132, C257SE23145, C257S700000, C257S701000, C257S459000, C257S774000, C257S680000, C257S750000, C257S762000
Reexamination Certificate
active
10761204
ABSTRACT:
A semiconductor device having bonding pads on a semiconductor substrate includes: an upper copper layer that is formed on the lower surface of the bonding pads with a barrier metal interposed and that has a copper area ratio that is greater than layers in which circuit interconnects are formed; and a lower copper layer that is electrically insulated from the upper copper layer and that is formed closer to the semiconductor substrate than the upper copper layer.
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NEC Electronics Corporation
Williams Alexander Oscar
Young & Thompson
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