Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-04-08
2008-04-08
Gurley, Lynne (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S067000, C257S072000, C257SE21370
Reexamination Certificate
active
10642305
ABSTRACT:
A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor.
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Nishioka et al., R
Yamazaki Shunpei
Zhang Hongyong
Costellia Jeffrey L.
Gurley Lynne
Matthews Colleen
Nixon & Peabody LLP
Semiconductor Energy Co., Ltd.
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