Amplifiers – With semiconductor amplifying device – Including gain control means
Reexamination Certificate
2008-04-01
2008-04-01
Ngueyn, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including gain control means
C330S129000, C330S141000, C330S285000
Reexamination Certificate
active
11360437
ABSTRACT:
This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.
REFERENCES:
patent: 6972626 (2005-12-01), Takahashi et al.
patent: 2000-151310 (2000-05-01), None
“SKY77324: IPACTM PAM for Quad-Band GSSM/GPRS” published by Skyworks.
Akamine Hitoshi
Matsudaira Nobuhiro
Morisawa Fuminori
Takahashi Kyoichi
Tsutsui Takayuki
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Ngueyn Khanh Van
Renesas Technology Corp.
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