Methods for forming an assembly for transfer of a useful layer

Details Methods for forming an assembly for transfer of a useful layer Methods for forming an assembly for transfer of a useful layer

2008-07-29

2008-07-29

Osele, Mark A (Department: 1791)

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

C156S267000, C156S345420, C427S275000, C438S458000

Reexamination Certificate

active

11437654

ABSTRACT:
Methods for transferring of a useful layer from a support are described. In an embodiment, the method includes for facilitating transfer of a useful layer from a support by providing an interface in a first support to define a useful layer; and forming a peripheral recess on the first support below the interface so that the periphery of the interface is exposed to facilitate removal and transfer of the useful layer. An epitaxial layer can be formed on the useful layer after forming the recess, with the width and depth of the recess being sufficient to accommodate the volume of residual material resulting from formation of the epitaxial layer without covering the periphery of the interface. Alternatively, an epitaxial layer can be formed on the useful layer after forming the recess, wherein the peripheral recess is configured for receiving sufficient residual material from the epitaxial layer to prevent bonding between the residual material and the useful layer.

REFERENCES:
patent: 5156896 (1992-10-01), Katoh et al.
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 5514425 (1996-05-01), Ito et al.
patent: 5863830 (1999-01-01), Bruel et al.
patent: 6100166 (2000-08-01), Sakaguchi et al.
patent: 6159323 (2000-12-01), Joly et al.
patent: 6177359 (2001-01-01), Chen et al.
patent: 6287891 (2001-09-01), Sayyah
patent: 6316333 (2001-11-01), Bruel et al.
patent: 6335258 (2002-01-01), Aspar et al.
patent: 6376332 (2002-04-01), Yanagita et al.
patent: 6406636 (2002-06-01), Vaganov
patent: 6448155 (2002-09-01), Iwasaki et al.
patent: 6465327 (2002-10-01), Aspar et al.
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6548338 (2003-04-01), Bernstein et al.
patent: 6562648 (2003-05-01), Wong et al.
patent: 6586044 (2003-07-01), Takeshita et al.
patent: 6624047 (2003-09-01), Sakaguchi et al.
patent: 6673694 (2004-01-01), Borenstein
patent: 6700631 (2004-03-01), Inoue et al.
patent: 6727549 (2004-04-01), Doyle
patent: 6767763 (2004-07-01), Uchiyama
patent: 6809009 (2004-10-01), Aspar et al.
patent: 7122095 (2006-10-01), Letertre et al.
patent: 2001/0055854 (2001-12-01), Nishida et al.
patent: 2002/0042189 (2002-04-01), Tanaka
patent: 2002/0081822 (2002-06-01), Yanagita et al.
patent: 2002/0096717 (2002-07-01), Chu et al.
patent: 2002/0132451 (2002-09-01), Akino et al.
patent: 2003/0234075 (2003-12-01), Aspar et al.
patent: 0 106 566 (1984-04-01), None
patent: 0 977 252 (2000-02-01), None
patent: 1 059 663 (2000-12-01), None
patent: 2 811 807 (2002-01-01), None
patent: 3-106052 (1991-05-01), None
patent: 6-229849 (1994-08-01), None
patent: 10-320851 (1998-12-01), None
patent: WO 01/04933 (2001-01-01), None
patent: WO 02/05344 (2002-01-01), None
patent: WO 02/084721 (2002-10-01), None
patent: WO 03/081644 (2003-10-01), None
S. Kodama et al., “Variable threshold A1GaAs/InGaAs heterostructure field-effect transistors with paired gates fabricated using the wafer-bonding technique,” Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, Tokyo, Japan (1999).

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