Semiconductor apparatus and infrared light sensor

Details Semiconductor apparatus and infrared light sensor Semiconductor apparatus and infrared light sensor

2008-05-06

2008-05-06

Porta, Dave (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

Reexamination Certificate

active

11540144

ABSTRACT:
A semiconductor apparatus includes a pair of first and second field effect transistors formed on a semiconductor substrate. The pair of first and second field effect transistors has the same configurations except for respective gate electrode sections. The gate electrode sections include material having different respective work functions. A radiant ray sensing section is connected to the gate sections and senses a radiant ray. The radiant ray sensing section causes the pair of first and second field effect transistors to serve as a temperature sensor via the respective gate sections.

REFERENCES:
patent: 2006/0163670 (2006-07-01), Ellis-Monaghan et al.
patent: 2663612 (1997-06-01), None
patent: 2001-284464 (2001-10-01), None

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