Semiconductor constructions

Details Semiconductor constructions Semiconductor constructions

2008-07-15

2008-07-15

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000

Reexamination Certificate

active

11377054

ABSTRACT:
The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H2, at least one H2-activating catalyst, and at least one metal-containing precursor dispersed therein. A metal-containing film is formed across the surface of the semiconductor substrate from metal of the at least one metal-containing precursor. The invention also includes semiconductor constructions having metal-containing layers which include one or more of copper, cobalt, gold and nickel in combination with one or more of palladium, platinum, iridium, rhodium and ruthenium.

REFERENCES:
patent: 4552786 (1985-11-01), Berneburg et al.
patent: 4582731 (1986-04-01), Smith
patent: 4692349 (1987-09-01), Georgiou et al.
patent: 4734227 (1988-03-01), Smith
patent: 4737384 (1988-04-01), Murthy et al.
patent: 4847674 (1989-07-01), Sliwa et al.
patent: 4970093 (1990-11-01), Sievers et al.
patent: 5227149 (1993-07-01), Sullivan
patent: 5403621 (1995-04-01), Jackson et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5462014 (1995-10-01), Awaya et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5514477 (1996-05-01), Ohashi et al.
patent: 5554564 (1996-09-01), Nishioka et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5789027 (1998-08-01), Watkins et al.
patent: 5891513 (1999-04-01), Dubin et al.
patent: 5982629 (1999-11-01), Shoji et al.
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6348732 (2002-02-01), Lopatin et al.
patent: 6352920 (2002-03-01), Shimomura
patent: 6358848 (2002-03-01), Lopatin
patent: 6365502 (2002-04-01), Paranjpe et al.
patent: 6365511 (2002-04-01), Kizilyalli et al.
patent: 6387806 (2002-05-01), Wang et al.
patent: 6399496 (2002-06-01), Edelstein et al.
patent: 6624513 (2003-09-01), Iwasaki et al.
patent: 6635528 (2003-10-01), Gilbert et al.
patent: 6653236 (2003-11-01), Wai et al.
patent: 6689700 (2004-02-01), Watkins et al.
patent: 7119018 (2006-10-01), Lane et al.
patent: 2006/0006070 (2006-01-01), Lane et al.
patent: 2006/0157857 (2006-07-01), Lane et al.
patent: 0 881 673 (1998-12-01), None
patent: 0 881 673 (1998-12-01), None
patent: 00/30264 (2000-11-01), None
Long, David P., Blackburn, Jason M., and Watkins, James J., Chemical Fluid Deposition: A Hybrid Technique fo Low-Temperature Metalization,Adv. Mater.2000, 12, No. 12, (2000).
Blackburn, Jason M., Long, David P., Cabañas, and Watkins, James J., Deposition of Conformal Copper and Nickel Films from Supercritical Carbon Dioxide,Science, vol. 294, (Oct. 2001).
Hybertson, Brooks M., Hansen, Brian N., Barkley, Robert M., and Sievers, Robert E.Deposition of Palladium Films by a Novel Supercritical Fluid TransportChemical Deposition Process,Mat. Res. Bull., vol. 26, pp. 1127-1133, (1991).
Hansen, Brian N., Hybertson, Brooks M., Barkley, Robert M., and Sievers, Robert E., Supercritical Fluid Transport Chemical Deposition of Films,Chem. Mater., 4, 749-752, (1992).
Bocquet, J.F., Chhor,K. , and Pommier, C., A New TiQFilm Deposition Process in a Supercritical Fluid,and Coatings Technology, 70, 73-78 (1994).
Hampden-Smith, Mark J. and Kodas, Toivo T., Chemical Vapor Deposition Metals: Part 1. An Overview of CVD Processes,Chemical Vapor Deposition, 1, No. 1, (1995).
Louchev, Oleg A., Popov, Vladimir K., and Antonov, Evguenii N., The Morphological Stability in Supercritical Fluid Chemical Deposition of Films Near the Critical Point,Journal of Crystal Growth155 (1995) 276-285.
Watkins, James J. and McCarthy, Thomas J., Polymer/Metal Nanocomposite Synthesis in Supercritical CQ,Chemistry of Materials, 7, (1995).

Affiliated with

Also associated with

Rating

Semiconductor constructions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor constructions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor constructions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3907891