Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-10-02
2007-10-02
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S442110, C250S281000, C250S287000
Reexamination Certificate
active
11173494
ABSTRACT:
An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of an implantation surface of the workpiece by the ion beam. The implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece within an interior region of the implantation chamber, the workpiece support structure. The workpiece support structure includes a rotation member coupled to the implantation chamber for changing an implantation angle of the workpiece with respect to a portion of the ion beam within the implantation chamber. The workpiece support structure also includes a translation member movably coupled to the rotation member and supporting the workpiece for movement along a path of travel wherein at least some components of the translation member components are disposed within a reduced pressure translation member chamber. The translation member chamber is isolated from the implantation chamber interior region by a dynamic seal. A workpiece holder support arm of the translation member extends through the dynamic seal and into the implantation chamber.
REFERENCES:
patent: 4761559 (1988-08-01), Myron
patent: 4975586 (1990-12-01), Ray
patent: 6710360 (2004-05-01), Ferrara
Axcelis Technologies Inc.
Berman Jack I.
Hashmi Zia R.
Tarolli, Sundheim Covell & Tummino LLP
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