Method for forming wall oxide layer and isolation layer in...

Details Method for forming wall oxide layer and isolation layer in... Method for forming wall oxide layer and isolation layer in...

2007-10-09

2007-10-09

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S431000, C438S435000, C438S257000

Reexamination Certificate

active

11016436

ABSTRACT:
Disclosed herein are methods for forming wall oxide films in flash memory devices and methods for forming isolation films. After trenches are formed in the substrate, an ISSG (In-Situ Steam Generation) oxidization process is performed to form wall oxide films on sidewalls of the trenches. This process prohibits formation of facets at the top and bottom edge portions of the trenches. Thus, the top edges of the trenches are rounded. Furthermore, the ISSG oxidization process is performed at a low temperature for a relatively short time. Therefore, thermal stress due to carrying out an oxidization process for a long time is reduced and a dislocation phenomenon is thus prevented from occurring.

REFERENCES:
patent: 6541382 (2003-04-01), Cheng et al.
patent: 2003/0040189 (2003-02-01), Chang et al.
patent: 2003/0194870 (2003-10-01), Hsu
patent: 2007/0004118 (2007-01-01), Varghese et al.
patent: 1521838 (2004-08-01), None
patent: 2004-179301 (2004-06-01), None
patent: 2002-83145 (2004-10-01), None
patent: 434793 (2001-05-01), None
Office action issued in corresponding Taiwanese application No. 93138677 filed Oct. 6, 2004.
Official action dated May 11, 2007 for counterpart Chinese Application No. 200510072686.6 (Chinese original and English translation included).

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