Tin chemical vapor deposition using TiCl4 and SiH4

Details Tin chemical vapor deposition using TiCl4 and SiH4 Tin chemical vapor deposition using TiCl4 and SiH4

1990-05-01

1990-12-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

4272552, H01L 21443

Patent

active

049771060

ABSTRACT:
A procedure in the formation of semiconductor devices for depositing TiN wherein silane and preferably SiH4 is substituted for the hydrogen in the prior art procedures to provide the approximate twofold to fivefold increase in TiN deposition rate at 400 degrees C. It is believed that the reason for the deposition rate increase is that there is a larger free energy change in the reaction which is believed to occur according to the equation: TiCl4+SiH4+NH3.fwdarw.TiN+SiCl4+(7/2)H2. The above described reaction provides cleaner films when performed in a cold wall CVD reactor than is provided by the prior art procedures as described above. Resistivity of 100 microohm-cm has been measured, this being typical of sputtered TiN films.

REFERENCES:
patent: 4469801 (1984-09-01), Hirai et al.
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 4803127 (1989-02-01), Hakim
"Thermodynamic Investigation of Selective Tungsten Chemical Vapour Deposition: Influence of Growth Conditions and Gas Additives on the Selective in the Fluoride Process", Carlsson et al., Thin Solid Films, 158 (1988) 107-122.

Affiliated with

Also associated with

Rating

Tin chemical vapor deposition using TiCl4 and SiH4 does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tin chemical vapor deposition using TiCl4 and SiH4, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tin chemical vapor deposition using TiCl4 and SiH4 will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-390057