Method for fabricating a metal-insulator-metal capacitor

Details Method for fabricating a metal-insulator-metal capacitor Method for fabricating a metal-insulator-metal capacitor

2007-10-02

2007-10-02

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S491100, C250S492300, 43, C178S019010, C355S053000

Reexamination Certificate

active

11320399

ABSTRACT:
A method for correcting angle zero position of an ion implantation equipment. The method includes loading a semiconductor wafer into the ion implantation equipment, implanting ions into the wafer with varying angle, measuring thermal wave and sheet resistance value of the wafer, and correcting the angle zero position with reference to points at which the measured thermal wave or sheet resistance value is minimized.

REFERENCES:
patent: 6828572 (2004-12-01), Reece et al.
patent: 6984832 (2006-01-01), Halling et al.
patent: 2006/0138355 (2006-06-01), Yue et al.

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