Method of producing layer structure of a memory cell for a dynam

Details Method of producing layer structure of a memory cell for a dynam Method of producing layer structure of a memory cell for a dynam

1989-07-07

1990-12-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437195, 437919, H01L 2170

Patent

active

049771027

ABSTRACT:
A method of producing a layer structure of a memory cell for dynamic random access memory device includes the steps of forming an insulation film on a semiconductor substrate, forming a first conductive film on the insulation film, the first conductive film being used for forming a part of a storage electrode of a memory cell capacitor, patterning the first conductive film and the insulation film so as to form a window used for forming a contact between the storage electrode and the semiconductor substrate, forming a second conductive film so as to cover the window and the first conductive film, the second conductive film being used for forming the remaining part of the storage electrode, and patterning the first conductive film and the second conductive film, patterened first and second conductive films constructing the storage electrode, forming a dielectric film so as to cover the storage electrode, and forming a third conductive film so as to cover the dielectric film, the third conductive film being an opposed electrode which is paired with the storage electrode of the memory cell capacitor.

REFERENCES:
patent: 4355374 (1982-10-01), Sakai et al.
patent: 4649406 (1987-03-01), Takemae et al.
patent: 4700457 (1987-10-01), Matsukawa
patent: 4812885 (1989-03-01), Riemenschneider
Koyanagi et al., "Novel High Density, Stacked Capacitor MOS RAM", Japanese J. of App. Physics, vol. 18, (1979).
Ohta et al., "Quadruphy Self-Aligned Stacked High-Capacitance RAM Using Ta.sub.2 O.sub.5 High Density VLSI Dynamic Memory", IEEE Trans. on Electronic Devices, Mar. 1982, pp. 368-76.

Affiliated with

Also associated with

Rating

Method of producing layer structure of a memory cell for a dynam does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing layer structure of a memory cell for a dynam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing layer structure of a memory cell for a dynam will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-390006