Process for operating an electronic device including a...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185260, C365S185280, C365S185290, C257S314000

Reexamination Certificate

active

11188898

ABSTRACT:
An electronic circuit can include a first memory cell and a second memory cell. In one embodiment, source/drain regions of the first and second memory cells can be electrically connected to each other. The source/drain regions may electrically float regardless of direction in which carriers flow through channel regions of the memory cells. In another embodiment, the first memory cell can be electrically connected to a first gate line, and the second memory cell can be electrically connected to a greater number of gate lines as compared to the first memory cell. In another aspect, the first and second memory cells are connected to the same bit line. Such bit line can electrically float when programming or reading the first memory cell or the second memory cell or any combination thereof.

REFERENCES:
patent: 4860070 (1989-08-01), Arimoto et al.
patent: 5196722 (1993-03-01), Bergendahl et al.
patent: 5252845 (1993-10-01), Kim et al.
patent: 5432365 (1995-07-01), Chin et al.
patent: 5705415 (1998-01-01), Orlowski et al.
patent: 5721448 (1998-02-01), Hauf et al.
patent: 5824580 (1998-10-01), Hauf et al.
patent: 5914523 (1999-06-01), Bashir et al.
patent: 5969383 (1999-10-01), Chang et al.
patent: 6074954 (2000-06-01), Lill et al.
patent: 6117733 (2000-09-01), Sung et al.
patent: 6121148 (2000-09-01), Bashir et al.
patent: 6228706 (2001-05-01), Horak et al.
patent: 6281064 (2001-08-01), Mandelman et al.
patent: 6307782 (2001-10-01), Sadd et al.
patent: 6320784 (2001-11-01), Muralidhar et al.
patent: 6330184 (2001-12-01), White et al.
patent: 6399441 (2002-06-01), Ogura et al.
patent: 6559032 (2003-05-01), Gonzalez et al.
patent: 6583466 (2003-06-01), Lin et al.
patent: 6638810 (2003-10-01), Bakli et al.
patent: 6673681 (2004-01-01), Kocon et al.
patent: 6674120 (2004-01-01), Fujiwara
patent: 6706599 (2004-03-01), Sadd et al.
patent: 6750499 (2004-06-01), Wu
patent: 6803620 (2004-10-01), Moriya et al.
patent: 6818512 (2004-11-01), Hsieh
patent: 6818939 (2004-11-01), Hadizad
patent: 6894339 (2005-05-01), Fan et al.
patent: 6916715 (2005-07-01), Hsiao et al.
patent: 6936887 (2005-08-01), Harari et al.
patent: 7015537 (2006-03-01), Lee et al.
patent: 7078286 (2006-07-01), Mehta
patent: 7098502 (2006-08-01), Mathew et al.
patent: 7112490 (2006-09-01), Hong et al.
patent: 7199419 (2007-04-01), Haller
patent: 2002/0151136 (2002-10-01), Lin et al.
patent: 2003/0062565 (2003-04-01), Yamazaki et al.
patent: 2003/0068864 (2003-04-01), Park et al.
patent: 2004/0000688 (2004-01-01), Harari et al.
patent: 2004/0121540 (2004-06-01), Lin
patent: 2004/0248371 (2004-12-01), Wang
patent: 2005/0037576 (2005-02-01), Chen et al.
patent: 2005/0148173 (2005-07-01), Shone
patent: 2005/0259475 (2005-11-01), Forbes
patent: 2005/0260094 (2005-11-01), Forbes
patent: 2005/0280089 (2005-12-01), Forbes
patent: 2006/0011966 (2006-01-01), Wang
patent: 2006/0046383 (2006-03-01), Chen et al.
patent: 2006/0131640 (2006-06-01), Yu et al.
patent: 2006/0152978 (2006-07-01), Forbes
patent: 2006/0166443 (2006-07-01), Forbes
Guan, H., et al. “An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory,” IEEE Transactions on Electron Devices, vol. 50, No. 3, pp. 809-815, Mar. 2003.
Hayashi, Y., et al. “Twin MONOS Cell with Dual Control Gates,” 2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 122-123, 2000.
Lee, D., et al. “Vertical Floating-Gate 4.5F2 Split-Gate NOR Flash Memory at 110nm Node,” 2004 Symposium on VLSI Technology Digest of Technical Papers, pp. 72-73, 2004.
Ma, Y. et al. “A Dual-Bit Split-Gate EEPROM (DSG) Cell in Contactless Array for Single-Vcc High Density Flash Memories,” IEDM, p. 57-60, 1994.
Osabe, T. et al. “Charge-Injection Length in Silicon Nanocrystal Memory Cells,” 2004 Symposium on VLSI Technology Digest of Technical Papers p. 242-243, 2004.
Van Houdt, J., et al. “An Analytical Model for the Optimization of Source-Side Injection Flash EEPROM Devices,” IEEE Transactions on Electron Devices, vol. 42, No. 7, pp. 1314-1320, Jul. 1995.
U.S. Appl. No. 10/961,295, filed Oct. 8, 2004.
U.S. Appl. No. 11/079,674, filed Mar. 14, 2005.
U.S. Appl. No. 11/188,935, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,999, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,953, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,584, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,910, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,909, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,591, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,939, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,588, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,603, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,615, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,582, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,583, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,604, filed Jul. 25, 2005.
U.S. Appl. No. 11/188,585, filed Jul. 25, 2005.
U.S. Appl. No. 11/525,747, filed Sep. 22, 2006.
U.S. Appl. No. 11/626,762, filed Jan. 24, 2007.
U.S. Appl. No. 11/626,753, filed Jan. 24, 2007.
U.S. Appl. No. 11/626,768, filed Jan. 24, 2007.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for operating an electronic device including a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for operating an electronic device including a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for operating an electronic device including a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3897995

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.