Reflection-type optoelectronic semiconductor device

Details Reflection-type optoelectronic semiconductor device Reflection-type optoelectronic semiconductor device

2007-08-21

2007-08-21

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000, C257S100000

Reexamination Certificate

active

10923025

ABSTRACT:
A reflection-type optoelectronic semiconductor device has an LED chip disposed on a first conducting wire portion, a second conducting wire portion connected to the LED chip via a connection wire, a packaging body for sealing the LED chip and part of the first conducting wire portion and the second conducting wire portion, a reflecting face disposed in an opposite direction of a light emission face of the LED chip and surrounding the packaging body, and an optical spectrum conversion layer coated onto the packaging body. A primary light emitted by the LED chip is reflected to the optical spectrum conversion layer by the reflecting face to undergo light excitation for producing a secondary light. The primary light and the secondary light are combined to generate a mixed light. A lens can be placed in the travel direction of the mixed light to change the distribution of the mixed light.

REFERENCES:
patent: 5998925 (1999-12-01), Shimizu et al.
patent: 2002/0024808 (2002-02-01), Suehiro et al.

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