Method for heat-treating silicon wafer and silicon wafer

Details Method for heat-treating silicon wafer and silicon wafer Method for heat-treating silicon wafer and silicon wafer

2007-12-25

2007-12-25

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S084000, C117S089000

Reexamination Certificate

active

11196480

ABSTRACT:
This method for heat-treating a silicon wafer includes: a step of subjecting a silicon wafer to a high-temperature heat treatment in an ambient gas atmosphere of hydrogen gas, argon gas or a mixture thereof; and a step of lowering a temperature at a rate of 2° C./min or less in a nitrogen-gas-containing ambient atmosphere in a portion or all of a process of lowering a temperature to a wafer removal temperature following said high-temperature heat treatment. This silicon wafer has a defect-free layer which is formed by a high-temperature heat treatment and is included in a surface thereof, wherein an average iron concentration in said surface is 1×1010atoms/cm3or less.

REFERENCES:
patent: 5-18254 (1985-12-01), None
patent: 3080501 (1994-09-01), None
patent: 06-295913 (1994-10-01), None
patent: 10-144698 (1998-05-01), None
patent: 2000-058552 (2000-02-01), None

Affiliated with

Also associated with

Rating

Method for heat-treating silicon wafer and silicon wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for heat-treating silicon wafer and silicon wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for heat-treating silicon wafer and silicon wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3897405