Structure and method of integrating compound and elemental...

Details Structure and method of integrating compound and elemental... Structure and method of integrating compound and elemental...

Filed on

2007-10-16

Date issued

2007-10-16

Examiner

Lindsay, Jr., Walter (Department: 2812)

Patent Class

Semiconductor device manufacturing: process

SubClass

Bonding of plural semiconductor substrates

Other Related Categories

C257SE21049, C257SE21088, C257SE21218, C257SE27035

Type

Reexamination Certificate

Status

active

Patent number

11046912

Description

ABSTRACT:
A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The first substrate is wafer bonded onto a monocrystalline Si substrate, such that the insulating layer bonds with the monocrystalline Si substrate. A semiconductor device includes a monocrystalline substrate, and a dielectric layer formed on the monocrystalline substrate. A semiconductor compound is formed on the dielectric layer and an elemental semiconductor material formed in proximity of the semiconductor compound and lattice-matched to the semiconductor compound.

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