Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-08-14
2007-08-14
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S492300, C250S3960ML, C250S306000, C250S310000
Reexamination Certificate
active
11037093
ABSTRACT:
An object of the present invention is to provide a sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method, which can reduce an edge roughness in a repaired pattern and also can provide the repairing of a sample by applying an electron beam-assisted etching or an electron beam-assisted deposition. There is provided a sample repairing method comprising: (a) a step of focusing an electron beam by an objective lens to irradiate a sample: (b) a step of supplying a reactive gas onto an electron beam irradiated surface of said sample: (c) a step of selectively scanning a pattern to be repaired on said sample with the electron beam so as to repair said pattern by applying an etching or a deposition; and (d) a step of providing a continuous exhausting operation by means of a differential exhaust system arranged in said objective lens so as to prevent the reactive gas supplied onto said electron beam irradiated surface from flowing toward an electron gun side.
REFERENCES:
patent: 5429730 (1995-07-01), Nakamura et al.
patent: 6392333 (2002-05-01), Veneklasen et al.
patent: 2005/0045821 (2005-03-01), Noji et al.
patent: 2005/0263715 (2005-12-01), Nakasuji et al.
Kato Takao
Murakami Takeshi
Nakasuji Mamoru
Noji Nobuharu
Satake Tohru
Ebara Corporation
Wells Nikita
Westerman, Hattori, Daniels & Adrian , LLP.
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