Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-10-23
2007-10-23
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000
Reexamination Certificate
active
11211964
ABSTRACT:
A semiconductor device including a substrate driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the substrate driven field-effect transistor of the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof, and a lateral channel above the conductive substrate. The substrate driven field-effect transistor also includes a second contact above the lateral channel and an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the first contact and the lateral channel. The semiconductor device also includes a Schottky diode parallel-coupled to the substrate driven field-effect transistor. A first and second terminal of the Schottky diode are couplable to the first and second contacts, respectively, of the substrate drive field-effect transistor.
REFERENCES:
patent: 4499481 (1985-02-01), Greene
patent: 4570174 (1986-02-01), Huang et al.
patent: 4636823 (1987-01-01), Margalit et al.
patent: 4903089 (1990-02-01), Hollis et al.
patent: 5068756 (1991-11-01), Morris et al.
patent: 5106778 (1992-04-01), Hollis et al.
patent: 5126701 (1992-06-01), Adlerstein
patent: 5126714 (1992-06-01), Johnson
patent: 5223449 (1993-06-01), Morris et al.
patent: 5231037 (1993-07-01), Yuan et al.
patent: 5244829 (1993-09-01), Kim
patent: 5342795 (1994-08-01), Yuan et al.
patent: 5343071 (1994-08-01), Kazior et al.
patent: 5369042 (1994-11-01), Morris et al.
patent: 5374887 (1994-12-01), Drobnik
patent: 5407842 (1995-04-01), Morris et al.
patent: 5468661 (1995-11-01), Yuan et al.
patent: 5554561 (1996-09-01), Plumton
patent: 5555494 (1996-09-01), Morris
patent: 5610085 (1997-03-01), Yuan et al.
patent: 5624860 (1997-04-01), Plumton et al.
patent: 5700703 (1997-12-01), Huang et al.
patent: 5712189 (1998-01-01), Plumton et al.
patent: 5747842 (1998-05-01), Plumton
patent: 5756375 (1998-05-01), Celii et al.
patent: 5783984 (1998-07-01), Keuneke
patent: 5784266 (1998-07-01), Chen
patent: 5804943 (1998-09-01), Kollman et al.
patent: 5889298 (1999-03-01), Plumton et al.
patent: 5909110 (1999-06-01), Yuan et al.
patent: 5910665 (1999-06-01), Plumton et al.
patent: 5920475 (1999-07-01), Boylan et al.
patent: 5956245 (1999-09-01), Rozman
patent: 5956578 (1999-09-01), Weitzel et al.
patent: 6008519 (1999-12-01), Yuan et al.
patent: 6038154 (2000-03-01), Boylan et al.
patent: 6094038 (2000-07-01), Lethellier
patent: 6097046 (2000-08-01), Plumton
patent: 6156611 (2000-12-01), Lan et al.
patent: 6181231 (2001-01-01), Bartilson
patent: 6191964 (2001-02-01), Boylan et al.
patent: 6208535 (2001-03-01), Parks
patent: 6218891 (2001-04-01), Lotfi et al.
patent: 6229197 (2001-05-01), Plumton et al.
patent: 6309918 (2001-10-01), Huang et al.
patent: 6323090 (2001-11-01), Zommer
patent: 6348848 (2002-02-01), Herbert
patent: 6362986 (2002-03-01), Schultz et al.
patent: 6477065 (2002-11-01), Parks
patent: 6483724 (2002-11-01), Blair et al.
patent: 6525603 (2003-02-01), Morgan
patent: 6549436 (2003-04-01), Sun
patent: 6661276 (2003-12-01), Chang
patent: 6741099 (2004-05-01), Krugly
patent: 6775159 (2004-08-01), Webb et al.
patent: 6873237 (2005-03-01), Chandrasekaran et al.
patent: 6980077 (2005-12-01), Chandrasekaran et al.
patent: 7012414 (2006-03-01), Mehrotra et al.
patent: 7046523 (2006-05-01), Sun et al.
patent: 7176662 (2007-02-01), Chandrasekaran
patent: 2002/0121647 (2002-09-01), Taylor
patent: 2003/0198067 (2003-10-01), Sun et al.
patent: 2005/0024179 (2005-02-01), Chandrasekaran et al.
patent: 2006/0038650 (2006-02-01), Mehrotra et al.
patent: 2006/0187684 (2006-08-01), Chandrasekaran et al.
patent: 2006/0197510 (2006-09-01), Chandrasekaran
patent: 2006/0198173 (2006-09-01), Rozman
patent: 2006/0208279 (2006-09-01), Robinson et al.
patent: 2006/0226477 (2006-10-01), Brar et al.
patent: 2006/0226478 (2006-10-01), Brar et al.
patent: 2006/0255360 (2006-11-01), Brar et al.
patent: 1 256 985 (2002-11-01), None
patent: 1 638 147 (2006-03-01), None
Eisenbeiser, K., et al., “Manufacturable GaAs VFET for Power Switching Applications,” IEEE Electron Device Letters, Apr. 2000, pp. 144-145, vol. 21, No. 4, IEEE.
Kollman, R., et al., “10 MHz PWM Converters with GaAs VFETs,” IEEE Eleventh Annual Applied Power Electronics Conference and Exposition, Mar. 1996, pp. 264-269, vol. 1, IEEE.
Liu, W., “Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs,” §5-5: Modulation Doping, 1999, pp. 323-330, John Wiley & Sons, New York, NY.
Nguyen, L.D., et al., “Ultra-High-Speed Modulation-Doped Field-Effect Transistors: A Tutorial Review,” Proceedings of the IEEE, Apr. 1992, pp. 494-518, vol. 80, No. 4, IEEE.
Niemela, V.A., et al., “Comparison of GaAs and Silicon Synchronous Rectifiers in a 3.3V Out, 50W DC-DC Converter,” 27th Annual, IEEE Power Electronics Specialists Conference, Jun. 1996, pp. 861-867, vol. 1, IEEE.
Plumton, D.L., et al., “A Low On-Resistance High-Current GaAs Power VFET,” IEEE Electron Device Letters, Apr. 1995, pp. 142-144, vol. 16, No. 4, IEEE.
Weitzel, C.E., “RF Power Devices for Wireless Communications,” 2002, 2002 IEEE MTT-S CDROM, paper TU4B-1, IEEE.
Williams, R., “Modern GaAs Processing Methods,” 1990, pp. 66-67, Artech House, Inc., Norwood, MA.
Berroth, M., et al., “Extreme Low Power 1:4 Demultiplexer Using Double Delta Doped Quantum Well GaAs/AlGaAs Transistors,” Japanese Journal of Applied Physics, Extended Abstracts of the 22nd 1990 International Conference on Solid State Devices and Materials, 1990, pp. 75-78, Tokyo, Japan.
Wu, C.S., et al., “Pseudomorphic HEMT Manufacturing Technology for Multifuntional Ka-Band MMIC Applications,” IEEE Transactions on Microwave Theory and Techniques, Feb. 1995, pp. 257-265, vol. 43, No. 2, IEEE, New York, US.
Asano, K., et al., “Novel High Power AlGaAs/GaAs HFET with a Field-Modulating Plate Operated at 35V Drain Voltage,” IEDM 98, 1998, pp. 59-62, IEEE, Los Alamitos, CA.
Lan, E., et al., “A Field Plate Device by Self-Aligned Spacer Process,” The International Conference on Compound Semiconductor Manufacturing Technology, 2004, pp. 35-38, GaAs Mantech, St. Louis, MO.
Sickmiller, M., “Packaging of Ultrathin Semiconductor Devices Through the ELO Packaging Process,” Mat. Res. Soc. Symp. Proc., 2001, pp. 17.3.1-17.3.6, vol. 681E, Materials Research Society, Warrendale, PA.
Tkachenko, Y., et al., “Improved Breakdown Voltage and Hot-Electron Reliability PHEMT for High Efficiency Power Amplifiers,” Asia Pacific Microwave Conference (AMPC'99), Nov. 30, 1999, pp. 618-621, vol. 3, IEEE, Los Alamitos, CA.
Brar Berinder P. S.
Ha Wonill
ColdWatt, Inc.
Dickey Thomas L.
Slater & Matsil L.L.P.
LandOfFree
Semiconductor device having substrate-driven field-effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having substrate-driven field-effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having substrate-driven field-effect... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3894701