Self-doped high performance complementary heterojunction field e

Details Self-doped high performance complementary heterojunction field e Self-doped high performance complementary heterojunction field e

1991-07-01

1992-08-25

Wojciechowicz, Edward J.

357 15, 357 16, 357 22, 357 46, H01L 2702

Patent

active

051423499

ABSTRACT:
A heterojunction field effect transistor structure having a plurality of vertically stacked field effect devices. Two or more devices having electrically independent source and drain regions are formed such that a single gate electrode controls current flow in each of the devices. Each of the vertically stacked FETs have electrically isolated channel regions which may be controlled by a single gate electrode. Vertically stacked devices provide greater device packing density.

REFERENCES:
patent: 4882608 (1989-11-01), Smith
Zhu et al.--Solid State Communications, vol. 75, No. 7, 1990, pp. 595-599.

Affiliated with

Also associated with

Rating

Self-doped high performance complementary heterojunction field e does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-doped high performance complementary heterojunction field e, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-doped high performance complementary heterojunction field e will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-389316