Method of manufacturing a memory device

Details Method of manufacturing a memory device Method of manufacturing a memory device

2007-08-14

2007-08-14

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

C438S238000, C438S257000, C257SE21008, C257S017000, C257S422000, C257S646000, C257SE27005, C257S084000

Reexamination Certificate

active

11103244

ABSTRACT:
A method of making a memory device and a memory device is described. In one embodiment, a method of manufacturing a memory device is described. The method includes providing a substrate having a tunneling layer deposited on a main surface and having a first conductive lines arranged on the tunneling layer running in a first direction. A layer of dielectric material is deposited on the first conductive lines. A control gate layer is deposited. The first conductive lines are patterned to produce gate stacks. Dielectric material is deposited in between the gate stacks. The gate stacks are partially removed to uncover floating gate electrodes in region of selection transistor lines to be prepared creating selection transistor line recesses running in the second direction. The selection transistor line recesses are filled with a conductive material to create the selection transistor lines.

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