Semiconductor device

Details Semiconductor device Semiconductor device

2007-10-16

2007-10-16

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S296000

Reexamination Certificate

active

10891372

ABSTRACT:
A capacitor having low voltage dependency and high pn junction diode reverse breakdown voltage. A first n-well is formed in the surface of a p-type silicon substrate. A second n-well is superimposed and formed in the first n-well. A gate electrode is formed along the entire surface of the gate insulation film and part of the field insulation film. A p+ type diffusion layer having a high p-type impurity concentration is formed on the surface of the second n-well. The edge of the p+ diffusion layer is spaced from the boundary between the gate insulation film and the field insulation film at which an electric field concentrates.

REFERENCES:
patent: 5576233 (1996-11-01), Hutter et al.
patent: 6534364 (2003-03-01), Erdeljac et al.
patent: 6825543 (2004-11-01), Shimotsusa et al.
patent: 2002/0167047 (2002-11-01), Yasuhara et al.
Patent Abstracts of Japan, Publication No. 2000-243979, Date of Publication Sep. 8, 2000, Title: “Semiconductor Device and Manufacture Thereof”.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3892684