Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-02-27
2007-02-27
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S072000, C257S783000, C257S787000, C257S689000, C257SE23116, C313S493000
Reexamination Certificate
active
10927005
ABSTRACT:
To provide an electro-optical device having a buffer layer which planarizes a gas barrier layer so that stress-concentration in the gas barrier layer is reduced, the buffer layer being prevented from leaking out of a predetermined area, and to provide a method of producing the same and an electronic apparatus. In an electro-optical device1having, on a substrate200, a plurality of first electrodes23, a bank structure221having a plurality of openings221apositioned correspondingly to the formed first electrodes, electro-optical layers60arranged in the respective openings221a, and a second electrode50covering the bank structure221and the electro-optical layers60, the device includes a buffer layer210formed so as to cover the second electrode50and have a substantially flat upper surface, a frame215made of a material having no affinity to the buffer layer210and surrounding the periphery of the buffer layer210, and a gas barrier layer30covering the buffer layer210and the frame215.
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Hayashi Kenji
Hiraide Katsuji
Nozawa Ryoichi
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