Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-12-04
2007-12-04
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257SE21597, C257S734000, C257S748000, C257S678000, C333S133000, C333S193000
Reexamination Certificate
active
11480500
ABSTRACT:
On a piezoelectric substrate23, there are provided surface acoustic wave devices F1and F2in which predetermined circuit patterns are formed, and a package substrate11comprising side vias16formed in a caved manner in the thickness direction on side surfaces on which the surface acoustic wave devices are mounted. When the side vias16are each assumed to have the opening width φ and the maximum depth D, a size satisfying φ/2<D is assumed. Thereby, it is possible to prevent protrusion of a soldering fillet applied on the side via.
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Chu Chris C.
McGinn IP Law Group PLLC
Parker Kenneth
TDK Corporation
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