Patent
1990-11-15
1992-08-25
Prenty, Mark V.
357 86, H01L 2974
Patent
active
051423472
ABSTRACT:
In symmetrically blocking thyristors and in diodes, a lowering of the storage charge at the anode side is desirable in some applications. This is achieved by shorts lying in the emitter zone of the anode side. These shorts are formed between zones of a first conductivity type embedded in the emitter zone and zones of a second conductivity type. The zones of the second conductivity type are deeper than those of the first conductivity type and partially overlap the zones of the first conductivity type. Given low current density, these shorts are ineffective; however, they are effective at high current densities. Shorts of this type can also be used at the cathode side in specific diodes that are to be utilized as free-wheeling diodes for GTO thyristors, and can also be employed in asymmetrical GTO thyristors at the anode side.
REFERENCES:
patent: 5086330 (1992-02-01), Minato
19th Annual IEEE Power Electronics Specialists Conference Technical Digest, Apr. 14, 1988; New York; T. Ogura et al., "Low Switching Loss, High Power Gate Turn-Off Thyristors (GTOS) with N-Buffer and New Anode Short Structure"; FIG. 9.
Japan Annuals Reviews in Electronics, Computers, and Telecommunications, 13 (1984), "Ideal Ohmic Contact and Application to High-Speed Low-Loss Diodes", Yoshihiro Amemiya et al., pp. 75-87.
Prenty Mark V.
Siemens Aktiengesellschaft
LandOfFree
Power semiconductor component with emitter shorts does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor component with emitter shorts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor component with emitter shorts will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-389219