Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reissue Patent
2007-08-21
2007-08-21
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S054000, C257S072000, C257S449000, C257S291000, C257SE31048, C257SE31083, C257SE31084, C250S370090, C250S370140, C349S041000
Reissue Patent
active
10167451
ABSTRACT:
A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.
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Itabashi Satoshi
Kaifu Noriyuki
Kobayashi Isao
Mizutani Hidemasa
Takeda Shinichi
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