Method for manufacturing ferroelectric memory

Details Method for manufacturing ferroelectric memory Method for manufacturing ferroelectric memory

2007-06-19

2007-06-19

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S239000, C438S240000, C438S396000, C257SE21664

Reexamination Certificate

active

11102809

ABSTRACT:
A semiconductor substrate formed with a MOSFET is prepared, and a first interlayer insulating film is deposited on the semiconductor substrate. A ferroelectric capacitor is formed on the first interlayer insulating film. Next, a second interlayer insulating film is formed on a first structure provided with the semiconductor substrate, the first interlayer insulating film and the ferroelectric capacitor so as to embed the ferroelectric capacitor therein. Openings for electrically connecting the MOSFET and the ferroelectric capacitor and an external circuit of a ferroelectric memory are formed in the second interlayer insulating film to form a second structure. A metal wiring is formed on the second interlayer insulating film to form a third structure. Next, the third structure is heat-treated in an atmosphere from over 350° C. to under 450° C.

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