Method for detecting photoelectric conversion amount and...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C250S370080, C348S294000

Reexamination Certificate

active

10520268

ABSTRACT:
A sensor substrate (20) which includes phototransistors (7), each having a photosensitive semiconductor layer, and auxiliary capacitances (17) connected to the drain electrodes D of the corresponding phototransistors (7), and detecting ICs (25) for detecting a photoelectric conversion amount of the sensor substrate (20), which is connected to a source electrode S of the phototransistor (7), are provided. In the auxiliary capacitance (17), a predetermined amount of charge is stored, and also stored are the charge as generated by an emission of a light beam onto a photosensitive semiconductor layer in the non-conductive state of the phototransistor (7). Each detecting IC (25) detects a photoelectric conversion amount of the sensor substrate (20) based on the amount of charge remaining in the auxiliary capacitance (17).

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patent: 2002-77522 (2002-03-01), None
patent: 2002-199282 (2002-07-01), None
Kobayashi et al, “Amorphous silicon 2-dimensional image sensor and its applications”, ITE Technical Report, vol. 17, No. 16, pp. 25-30, Mar. 1993.

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