Sequentially charged nanocrystal light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257SE33001, C977S950000

Reexamination Certificate

active

11100807

ABSTRACT:
A light emitting device including a transistor structure formed on a semiconductor substrate. The transistor structure having a source region, a drain region, a channel region between the source and drain regions, and a gate oxide on the channel region. The light emitting device including a plurality of nanocrystals embedded in the gate oxide, and a gate contact made of semitransparent or transparent material formed on the gate oxide. The nanocrystals are adapted to be first charged with first type charge carriers, and then provided second type charge carriers, such that the first and second type charge carriers form excitons used to emit light.

REFERENCES:
patent: 5179316 (1993-01-01), Kellam
patent: 5714766 (1998-02-01), Chen et al.
patent: 6060743 (2000-05-01), Sugiyama et al.
patent: 6407424 (2002-06-01), Forbes
patent: 6586785 (2003-07-01), Flagan et al.
patent: 6723606 (2004-04-01), Flagan et al.
patent: 2003/0034486 (2003-02-01), Korgel
patent: 2003/0230629 (2003-12-01), Bourianoff et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2005/0253136 (2005-11-01), Ono et al.
Wang et al. “Greem ZnO Phosphor by Oxidation of Metallic Zinc in Air,” Abstract Twelfth Inernational Symosium on the Physics and Chemistry of Materials, May 2, 2003.
International Search Report for International Application No. PCT/US2005/011640, filed Apr. 6, 2005, report completed Sep. 1, 2006, mailed Oct. 17, 2006, 2 pgs.
Written Opinion for International Application No. PCT/US2005/011640, filed Apr. 6, 2005. report completed Sep. 1, 2006, mailed Oct. 17, 2006, 3 pgs.
Krieger et al., “The Travels of An Exciton”, Focus, Phys. Rev. Lett. 91, 177401, 2 pgs, found at http://focus.aps.org/story/v12/st15, printed Mar. 17, 2005.
Walters et al., “Field-Effect Electroluminescence In Silicon Nanocrystals”, Nature Materials, Advance Online Publication, www.nature.com
aturematerials, Jan. 23, 2005, pp. 1-4.
Linnros, Jan, “Optoelectronics—Nanocrystals Brighten Transistors”, Nature Materials, www.nature.com
aturematerials, vol. 4, Feb. 2005, pp. 117-119.
“Quantum Dots”, found at http://vortex.tn.tudelft.nl/grkouwen/qdotsite.html, printed Mar. 29, 2005, 3 pgs.
“Fundamentals”, Chapters 2; pp. 7-20.
“Phonon”, found at http://en.wikipedia.org./wiki/Phonon, printed Mar. 17, 2005, 7 pgs.
“Exciton”, found at http://en.wikipedia.ort/wiki/Exciton, printed Mar. 17, 2005, 1 pg.

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