Semiconductor device

Details Semiconductor device Semiconductor device

2007-11-13

2007-11-13

Ho, Tu-Tu V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S409000, C257SE23145

Reexamination Certificate

active

11183820

ABSTRACT:
The semiconductor device100includes a multilayer wiring structure formed on the semiconductor substrate. The multilayer wiring structure includes at least a first inter layer dielectric film120in which interconnects124are formed, and at least a second inter layer dielectric film122in which vias126are formed. The multilayer wiring structure includes a circuit region110in which the interconnects124and the vias126are formed, a seal ring region112formed around the circuit region110and in which seal rings surrounding the circuit region110in order to seal the circuit region110are formed, and a peripheral region114formed around the seal ring region112. The semiconductor device100further includes dummy vias136formed of a metal material, formed in the second interlayer dielectric film122at the peripheral region114.

REFERENCES:
patent: 2004/0084777 (2004-05-01), Yamanoue et al.
patent: 2004/0147111 (2004-07-01), Haung et al.
patent: 2000-340529 (2000-12-01), None

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